NTHS5441PT1G
NTHS5441PT1G
Artikelnummer:
NTHS5441PT1G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET P-CH 20V 3.9A CHIPFET
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
39733 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NTHS5441PT1G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NTHS5441PT1G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1.2V @ 250µA
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:ChipFET™
Serie:-
Rds On (Max) @ Id, Vgs:46 mOhm @ 3.9A, 4.5V
Verlustleistung (max):1.3W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SMD, Flat Lead
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:710pF @ 5V
Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 3.9A (Ta) 1.3W (Ta) Surface Mount ChipFET™
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.9A (Ta)
Email:[email protected]

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