NTHS2101PT1
NTHS2101PT1
Artikelnummer:
NTHS2101PT1
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET P-CH 8V 5.4A CHIPFET
RoHS-Status:
Enthält Blei / RoHS nicht konform
Menge auf Lager:
53179 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NTHS2101PT1.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NTHS2101PT1
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:ChipFET™
Serie:-
Rds On (Max) @ Id, Vgs:25 mOhm @ 5.4A, 4.5V
Verlustleistung (max):1.3W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SMD, Flat Lead
Andere Namen:NTHS2101PT1OS
Betriebstemperatur:-
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:2400pF @ 6.4V
Gate Charge (Qg) (Max) @ Vgs:30nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.8V, 4.5V
Drain-Source-Spannung (Vdss):8V
detaillierte Beschreibung:P-Channel 8V 5.4A (Tj) 1.3W (Ta) Surface Mount ChipFET™
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:5.4A (Tj)
Email:[email protected]

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