NSVDTC123JM3T5G
Artikelnummer:
NSVDTC123JM3T5G
Hersteller:
ON Semiconductor
Beschreibung:
SOT-723 BIAS RESISTOR
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
84573 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NSVDTC123JM3T5G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NSVDTC123JM3T5G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Transistor-Typ:NPN - Pre-Biased
Supplier Device-Gehäuse:SOT-723
Serie:Automotive, AEC-Q101
Widerstand - Emitterbasis (R2):47 kOhms
Widerstand - Basis (R1):2.2 kOhms
Leistung - max:260mW
Verpackung / Gehäuse:SOT-723
Befestigungsart:Surface Mount
Hersteller Standard Vorlaufzeit:4 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723
DC Stromgewinn (HFE) (Min) @ Ic, VCE:80 @ 5mA, 10V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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