MUN5235T1G
MUN5235T1G
Artikelnummer:
MUN5235T1G
Hersteller:
ON Semiconductor
Beschreibung:
TRANS PREBIAS NPN 202MW SC70-3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
59622 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
MUN5235T1G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-MUN5235T1G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Transistor-Typ:NPN - Pre-Biased
Supplier Device-Gehäuse:SC-70-3 (SOT323)
Serie:-
Widerstand - Emitterbasis (R2):47 kOhms
Widerstand - Basis (R1):2.2 kOhms
Leistung - max:202mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:SC-70, SOT-323
Andere Namen:MUN5235T1GOSCT
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:5 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
DC Stromgewinn (HFE) (Min) @ Ic, VCE:80 @ 5mA, 10V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):100mA
Basisteilenummer:MUN52**T
Email:[email protected]

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