LRI2K-SBN18/2GE
Artikelnummer:
LRI2K-SBN18/2GE
Hersteller:
STMicroelectronics
Beschreibung:
IC EEPROM MEMORY TAG WAFER
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
82226 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
LRI2K-SBN18/2GE.pdf

Einführung

We can supply LRI2K-SBN18/2GE, use the request quote form to request LRI2K-SBN18/2GE pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number LRI2K-SBN18/2GE.The price and lead time for LRI2K-SBN18/2GE depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# LRI2K-SBN18/2GE.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-LRI2K-SBN18/2GE
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Schreibbarer Speicher:2kb (User)
Technologie:Passive
Stil:Inlay
Standards:ISO 15693, ISO 18000-3
Größe / Dimension:76.00mm x 45.00mm
Serie:LRI2K
Betriebstemperatur:-20°C ~ 85°C
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Speichertyp:Read/Write
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz:13.56MHz
detaillierte Beschreibung:RFID Tag Read/Write 2kb (User) Memory 13.56MHz ISO 15693, ISO 18000-3 Inlay
Email:[email protected]

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