IXTH16N10D2
IXTH16N10D2
Artikelnummer:
IXTH16N10D2
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 100V 16A TO-247
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
47741 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXTH16N10D2.pdf

Einführung

We can supply IXTH16N10D2, use the request quote form to request IXTH16N10D2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTH16N10D2.The price and lead time for IXTH16N10D2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTH16N10D2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IXTH16N10D2
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:-
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-247 (IXTH)
Serie:-
Rds On (Max) @ Id, Vgs:64 mOhm @ 8A, 0V
Verlustleistung (max):830W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:225nC @ 5V
Typ FET:N-Channel
FET-Merkmal:Depletion Mode
Antriebsspannung (Max Rds On, Min Rds On):0V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 16A (Tc) 830W (Tc) Through Hole TO-247 (IXTH)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:16A (Tc)
Email:[email protected]

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