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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFK36N60P
IXFK36N60P
IXFK36N60P
Artikelnummer:
IXFK36N60P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 600V 36A TO-264
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
38958 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFK36N60P.pdf
Anfrage

Einführung

We can supply IXFK36N60P, use the request quote form to request IXFK36N60P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFK36N60P.The price and lead time for IXFK36N60P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFK36N60P.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IXFK36N60P
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5V @ 4mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-264AA (IXFK)
Serie:HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs:190 mOhm @ 18A, 10V
Verlustleistung (max):650W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-264-3, TO-264AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:102nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-264AA (IXFK)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:36A (Tc)
Email:[email protected]

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