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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFH60N65X2
IXFH60N65X2
IXFH60N65X2
Artikelnummer:
IXFH60N65X2
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 650V 60A TO-247
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
66698 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFH60N65X2.pdf
Anfrage

Einführung

We can supply IXFH60N65X2, use the request quote form to request IXFH60N65X2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFH60N65X2.The price and lead time for IXFH60N65X2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFH60N65X2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IXFH60N65X2
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5.5V @ 4mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:52 mOhm @ 30A, 10V
Verlustleistung (max):780W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:6180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:107nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 60A (Tc) 780W (Tc) Through Hole
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:60A (Tc)
Email:[email protected]

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