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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFA12N65X2
IXFA12N65X2
IXFA12N65X2
Artikelnummer:
IXFA12N65X2
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH
Menge auf Lager:
74897 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFA12N65X2.pdf
Anfrage

Einführung

We can supply IXFA12N65X2, use the request quote form to request IXFA12N65X2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFA12N65X2.The price and lead time for IXFA12N65X2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFA12N65X2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IXFA12N65X2
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-263AA
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:310 mOhm @ 6A, 10V
Verlustleistung (max):180W (Tc)
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Hersteller Standard Vorlaufzeit:24 Weeks
Eingabekapazität (Ciss) (Max) @ Vds:1134pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:18.5nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 12A (Tc) 180W (Tc) Surface Mount TO-263AA
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12A (Tc)
Email:[email protected]

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