HGT1S7N60A4DS
HGT1S7N60A4DS
Artikelnummer:
HGT1S7N60A4DS
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 600V 34A 125W TO263AB
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
36193 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
HGT1S7N60A4DS.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-HGT1S7N60A4DS
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):600V
VCE (on) (Max) @ Vge, Ic:2.7V @ 15V, 7A
Testbedingung:390V, 7A, 25 Ohm, 15V
Td (ein / aus) bei 25 ° C:11ns/100ns
Schaltenergie:55µJ (on), 60µJ (off)
Supplier Device-Gehäuse:TO-263AB
Serie:-
Rückwärts-Erholzeit (Trr):34ns
Leistung - max:125W
Verpackung:Tube
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:-
Gate-Ladung:37nC
detaillierte Beschreibung:IGBT 600V 34A 125W Surface Mount TO-263AB
Strom - Collector Pulsed (Icm):56A
Strom - Kollektor (Ic) (max):34A
Email:[email protected]

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