HGT1S2N120CN
Artikelnummer:
HGT1S2N120CN
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 1200V 13A 104W I2PAK
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
81443 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
HGT1S2N120CN.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-HGT1S2N120CN
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):1200V
VCE (on) (Max) @ Vge, Ic:2.4V @ 15V, 2.6A
Testbedingung:960V, 2.6A, 51 Ohm, 15V
Td (ein / aus) bei 25 ° C:25ns/205ns
Schaltenergie:96µJ (on), 355µJ (off)
Supplier Device-Gehäuse:TO-262
Serie:-
Leistung - max:104W
Verpackung:Tube
Verpackung / Gehäuse:TO-262-3 Long Leads, I²Pak, TO-262AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:NPT
Gate-Ladung:30nC
detaillierte Beschreibung:IGBT NPT 1200V 13A 104W Through Hole TO-262
Strom - Collector Pulsed (Icm):20A
Strom - Kollektor (Ic) (max):13A
Email:[email protected]

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