DTA115TMT2L
DTA115TMT2L
Artikelnummer:
DTA115TMT2L
Hersteller:
LAPIS Semiconductor
Beschreibung:
TRANS PREBIAS PNP 150MW VMT3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
51072 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.DTA115TMT2L.pdf2.DTA115TMT2L.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-DTA115TMT2L
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 100µA, 1mA
Transistor-Typ:PNP - Pre-Biased
Supplier Device-Gehäuse:VMT3
Serie:-
Widerstand - Basis (R1):100 kOhms
Leistung - max:150mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-723
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:10 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:250MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VMT3
DC Stromgewinn (HFE) (Min) @ Ic, VCE:100 @ 1mA, 5V
Strom - Collector Cutoff (Max):500nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Basisteilenummer:DTA115
Email:[email protected]

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