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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-Bipolar (BJT)-Einzel > DRDN005W-7
DRDN005W-7
DRDN005W-7
Artikelnummer:
DRDN005W-7
Hersteller:
Diodes Incorporated
Beschreibung:
TRANS NPN 80V 0.5A SOT363
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
62182 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
DRDN005W-7.pdf
Anfrage

Einführung

We can supply DRDN005W-7, use the request quote form to request DRDN005W-7 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DRDN005W-7.The price and lead time for DRDN005W-7 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DRDN005W-7.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-DRDN005W-7
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):80V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor-Typ:NPN + Diode (Isolated)
Supplier Device-Gehäuse:SOT-363
Serie:-
Leistung - max:200mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Andere Namen:DRDN005WDICT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:100MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor NPN + Diode (Isolated) 80V 500mA 100MHz 200mW Surface Mount SOT-363
DC Stromgewinn (HFE) (Min) @ Ic, VCE:100 @ 100mA, 1V
Strom - Collector Cutoff (Max):100nA
Strom - Kollektor (Ic) (max):500mA
Basisteilenummer:DRDN005
Email:[email protected]

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