APTSM120AM08CT6AG
Artikelnummer:
APTSM120AM08CT6AG
Hersteller:
Microsemi
Beschreibung:
POWER MODULE - SIC
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
73661 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
APTSM120AM08CT6AG.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-APTSM120AM08CT6AG
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:3V @ 10mA
Supplier Device-Gehäuse:SP6
Serie:-
Rds On (Max) @ Id, Vgs:10 mOhm @ 200A, 20V
Leistung - max:2300W
Verpackung:Bulk
Verpackung / Gehäuse:SP6
Betriebstemperatur:-40°C ~ 175°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:14 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:1360nC @ 20V
Typ FET:2 N-Channel (Dual), Schottky
FET-Merkmal:Silicon Carbide (SiC)
Drain-Source-Spannung (Vdss):1200V (1.2kV)
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual), Schottky 1200V (1.2kV) 370A (Tc) 2300W Chassis Mount SP6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:370A (Tc)
Email:[email protected]

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