Deutsch
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Suomi Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Svenska Ελλάδα Български език✕
Über uns | Kontakt | Angebot anfordern |
Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-IGBTs-Einzel > APT35GP120B2DQ2G
APT35GP120B2DQ2G
APT35GP120B2DQ2G
Artikelnummer:
APT35GP120B2DQ2G
Hersteller:
Microsemi
Beschreibung:
IGBT 1200V 96A 543W TMAX
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
45744 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.APT35GP120B2DQ2G.pdf2.APT35GP120B2DQ2G.pdf
Anfrage

Einführung

We can supply APT35GP120B2DQ2G, use the request quote form to request APT35GP120B2DQ2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT35GP120B2DQ2G.The price and lead time for APT35GP120B2DQ2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT35GP120B2DQ2G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-APT35GP120B2DQ2G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):1200V
VCE (on) (Max) @ Vge, Ic:3.9V @ 15V, 35A
Testbedingung:600V, 35A, 4.3 Ohm, 15V
Td (ein / aus) bei 25 ° C:16ns/95ns
Schaltenergie:750µJ (on), 680µJ (off)
Serie:POWER MOS 7®
Leistung - max:543W
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3 Variant
Andere Namen:APT35GP120B2DQ2GMI
APT35GP120B2DQ2GMI-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:PT
Gate-Ladung:150nC
detaillierte Beschreibung:IGBT PT 1200V 96A 543W Through Hole
Strom - Collector Pulsed (Icm):140A
Strom - Kollektor (Ic) (max):96A
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung

In Verbindung stehende Teile für APT35GP120B2DQ2G

Image Artikelnummer Hersteller Beschreibung Aussicht
APT35GP120JDQ2 Image APT35GP120JDQ2 Microsemi IGBT 1200V 64A 284W SOT227 Anfrage
APT35SM70S Microsemi MOSFET N-CH 700V D3PAK Anfrage
APT35DL120HJ Image APT35DL120HJ Microsemi DIODE MODULE 1.2KV SOT227 Anfrage
APT35SM70B Microsemi MOSFET N-CH 700V TO247 Anfrage
APT35GA90B Image APT35GA90B Microsemi IGBT 900V 63A 290W TO-247 Anfrage
APT34N80LC3G Image APT34N80LC3G Microsemi MOSFET N-CH 800V 34A TO-264 Anfrage
APT34N80B2C3G Image APT34N80B2C3G Microsemi MOSFET N-CH 800V 34A T-MAX Anfrage
APT35GT120JU3 Image APT35GT120JU3 Microsemi IGBT 1200V 55A 260W SOT227 Anfrage
APT36GA60BD15 Image APT36GA60BD15 Microsemi IGBT 600V 65A 290W TO-247 Anfrage
APT36GA60B Image APT36GA60B Microsemi IGBT 600V 65A 290W TO-247 Anfrage
APT35GN120BG Image APT35GN120BG Microsemi IGBT 1200V 94A 379W TO247 Anfrage
APT34M60B Image APT34M60B Microsemi MOSFET N-CH 600V 36A TO-247 Anfrage
APT36N90BC3G Image APT36N90BC3G Microsemi MOSFET N-CH 900V 36A TO-247 Anfrage
APT35GT120JU2 Image APT35GT120JU2 Microsemi IGBT 1200V 35A 260W SOT-227 Anfrage
APT34F60BG Image APT34F60BG Microsemi MOSFET N-CH 600V 34A TO-247 Anfrage
APT35GP120J Image APT35GP120J Microsemi IGBT 1200V 64A 284W SOT227 Anfrage
APT35GA90BD15 Image APT35GA90BD15 Microsemi IGBT 900V 63A 290W TO247 Anfrage
APT35GN120L2DQ2G Image APT35GN120L2DQ2G Microsemi IGBT 1200V 94A 379W TO264 Anfrage
APT35GP120BG Image APT35GP120BG Microsemi IGBT 1200V 96A 543W TO247 Anfrage
APT34M120J Image APT34M120J Microsemi MOSFET N-CH 1200V 34A SOT-227 Anfrage

läst Nachrichten