2SC5201,T6MURAF(J
Artikelnummer:
2SC5201,T6MURAF(J
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS NPN 50MA 600V TO226-3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
61690 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
2SC5201,T6MURAF(J.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-2SC5201,T6MURAF(J
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):600V
VCE Sättigung (Max) @ Ib, Ic:1V @ 500mA, 20mA
Transistor-Typ:NPN
Supplier Device-Gehäuse:TO-92MOD
Serie:-
Leistung - max:900mW
Verpackung:Bulk
Verpackung / Gehäuse:TO-226-3, TO-92-3 Long Body
Andere Namen:2SC5201T6MURAF(J
2SC5201T6MURAFJ
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Bipolar (BJT) Transistor NPN 600V 50mA 900mW Through Hole TO-92MOD
DC Stromgewinn (HFE) (Min) @ Ic, VCE:100 @ 20mA, 5V
Strom - Collector Cutoff (Max):1µA (ICBO)
Strom - Kollektor (Ic) (max):50mA
Email:[email protected]

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