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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > IXTP12N65X2
IXTP12N65X2
IXTP12N65X2
Part Number:
IXTP12N65X2
Výrobce:
IXYS Corporation
Popis:
MOSFET N-CH 650V 12A TO-220
Stav RoHS:
Bez olova / V souladu RoHS
Množství na skladě:
46051 Pieces
Čas doručení:
1-2 days (We have stocks to ship now)
Doba výroby:
4-8 weeks
Datový list:
IXTP12N65X2.pdf
Dotaz

Úvod

We can supply IXTP12N65X2, use the request quote form to request IXTP12N65X2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTP12N65X2.The price and lead time for IXTP12N65X2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTP12N65X2.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Číslo interní součásti RO-IXTP12N65X2
Stav Original New
Země původu Contact us
Nejlepší značení email us
Výměna, nahrazení See datasheet
Vgs (th) (max) 'Id:5V @ 250µA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-220
Série:-
RDS On (Max) @ Id, Vgs:300 mOhm @ 6A, 10V
Ztráta energie (Max):180W (Tc)
Obal:Tube
Paket / krabice:TO-220-3
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Výrobní standardní doba výroby:24 Weeks
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:1100pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:17nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):650V
Detailní popis:N-Channel 650V 12A (Tc) 180W (Tc) Through Hole TO-220
Proud - kontinuální odtok (Id) @ 25 ° C:12A (Tc)
Email:[email protected]

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