內部型號 | RO-NTD65N03R-001 |
---|---|
狀況 | Original New |
原產地 | Contact us |
頂部標記 | email us |
替代 | See datasheet |
VGS(TH)(最大)@標識: | 2V @ 250µA |
Vgs(最大): | ±20V |
技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | I-PAK |
系列: | - |
RDS(ON)(最大值)@標識,柵極電壓: | 8.4 mOhm @ 30A, 10V |
功率耗散(最大): | 1.3W (Ta), 50W (Tc) |
封装: | Tube |
封裝/箱體: | TO-251-3 Short Leads, IPak, TO-251AA |
工作溫度: | -55°C ~ 175°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度等級(MSL): | 1 (Unlimited) |
無鉛狀態/ RoHS狀態: | Contains lead / RoHS non-compliant |
輸入電容(Ciss)(Max)@ Vds: | 1400pF @ 20V |
柵極電荷(Qg)(Max)@ Vgs: | 16nC @ 5V |
FET型: | N-Channel |
FET特點: | - |
驅動電壓(最大Rds開,最小Rds開): | 4.5V, 10V |
漏極至源極電壓(Vdss): | 25V |
詳細說明: | N-Channel 25V 9.5A (Ta), 32A (Tc) 1.3W (Ta), 50W (Tc) Through Hole I-PAK |
電流 - 25°C連續排水(Id): | 9.5A (Ta), 32A (Tc) |
Email: | [email protected] |