FDFMA2P859T
FDFMA2P859T
型號:
FDFMA2P859T
製造商:
ON Semiconductor
描述:
MOSFET P-CH 20V 3A MICROFET
RoHS狀態:
無鉛/符合RoHS
庫存數量:
37351 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
FDFMA2P859T.pdf

簡單介紹

We can supply FDFMA2P859T, use the request quote form to request FDFMA2P859T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDFMA2P859T.The price and lead time for FDFMA2P859T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDFMA2P859T.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-FDFMA2P859T
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:1.3V @ 250µA
Vgs(最大):±8V
技術:MOSFET (Metal Oxide)
供應商設備封裝:MicroFET 2x2 Thin
系列:PowerTrench®
RDS(ON)(最大值)@標識,柵極電壓:120 mOhm @ 3A, 4.5V
功率耗散(最大):1.4W (Ta)
封装:Tape & Reel (TR)
封裝/箱體:6-UDFN Exposed Pad
其他名稱:FDFMA2P859TTR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:435pF @ 10V
柵極電荷(Qg)(Max)@ Vgs:6nC @ 4.5V
FET型:P-Channel
FET特點:Schottky Diode (Isolated)
驅動電壓(最大Rds開,最小Rds開):1.8V, 4.5V
漏極至源極電壓(Vdss):20V
詳細說明:P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount MicroFET 2x2 Thin
電流 - 25°C連續排水(Id):3A (Ta)
Email:[email protected]

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