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SI1071X-T1-GE3
- Part Number:
- SI1071X-T1-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET P-CH 30V 0.96A SC89-6
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 65084 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- SI1071X-T1-GE3.pdf
Introduction
Specifications
| Internal Part Number | RO-SI1071X-T1-GE3 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 1.45V @ 250µA |
| Vgs (Max): | ±12V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | SC-89-6 |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 167 mOhm @ 960mA, 10V |
| Power Dissipation (Max): | 236mW (Ta) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | SOT-563, SOT-666 |
| Other Names: | SI1071X-T1-GE3CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.3nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | P-Channel 30V 236mW (Ta) Surface Mount SC-89-6 |
| Current - Continuous Drain (Id) @ 25°C: | - |
| Email: | [email protected] |
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