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NTP8G202NG
- Part Number:
- NTP8G202NG
- Manufacturer:
- ON Semiconductor
- Description:
- MOSFET N-CH 600V 9A TO220
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 77605 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- NTP8G202NG.pdf
Introduction
Specifications
| Internal Part Number | RO-NTP8G202NG |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 2.6V @ 500µA |
| Vgs (Max): | ±18V |
| Technology: | GaNFET (Gallium Nitride) |
| Supplier Device Package: | TO-220-3 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 350 mOhm @ 5.5A, 8V |
| Power Dissipation (Max): | 65W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Other Names: | NTP8G202NGOS |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 8V |
| Drain to Source Voltage (Vdss): | 600V |
| Detailed Description: | N-Channel 600V 9A (Tc) 65W (Tc) Through Hole TO-220-3 |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Email: | [email protected] |
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