News

ONSEMI launched the world's first TOLL packaging 650 V silicon carbide MOSFET

  • Author:ROGER
  • Release on:2022-06-16

On May 11th, onSemi, a leading intelligent power supply and intelligent perception technology, released the world's first To-Leadless (TOLL) packaging of silicon carbide (SIC) MOSFET at the PCIM EUROPE exhibition. The transistor meets the needs of rapid growth in high -performance switching devices suitable for high -power density design. Until recently, SIC devices have been encapsulated in D2PAK 7 pin with obvious need to be obviously needed.

The size of TOLL is only 9.90 mm x 11.68 mm, which saves 30%than the PCB area encapsulated by D2PAK. Moreover, its shape is only 2.30 mm, 60%smaller than the volume of D2PAK packaging.

In addition to smaller sizes, TOLL packaging also offers better thermal properties and lower packaging inductances (2 NH) than D2PAK 7 pins. Its Kelvin Source configuration can ensure lower door noise and switching loss -including compared with devices without Kelvin configuration, the turn loss (EON) is reduced by 60%to ensure that in a challenging power design design It can significantly improve energy efficiency and power density, as well as improving electromagnetic interference (EMI) and easier PCB design.

"The high -level vice president and general manager of the ONSEMI Advanced Power Subsidies, said:" Can provide highly reliable power design in small spaces are becoming a competitive advantage in many fields, including industry, high -performance power supply and server applications. SIC MOSFET is encapsulated in TOLL packaging, which not only reduces space, but also enhances performance in many aspects, such as EMI and reduced losses. It provides a highly reliable and solid high -performance switch device for the market. Power design challenge. "

配图(1).jpg

SIC devices have obvious advantages than Silicon's predecessors, including enhancing high -frequency energy efficiency, lower EMIs, can work at higher temperatures and reliable. ONSEMI is the only SIC solution supplier with vertical integration capabilities, including SIC crystal ball growth, substrate, extension, wafer manufacturing, the best integrated module and separation package solution.

NTBL045N065SC1 is the first SIC MOSFET encapsulated with TOLL, which is suitable for rigorous applications, including switching power supply (SMPS), server and telecommunications power supply, solar inverters, uninterrupted power supply (UPS) and energy storage. This device is suitable for design that needs to meet the most challenging energy efficiency standards, including ERP and 80 Plus Titanium energy efficiency standards.

The VDSS rated value of the NTBL045N065SC1 is 650 V, the typical RDS (on) is only 33 MΩ, and the maximum power consumption (ID) is 73 A. Based on the Width Band (WBG) SIC technology, the maximum operating temperature of the device is 175 ° C, and it has ultra -low -door pole charges (QG (TOT) = 105 NC), which can significantly reduce switching loss. In addition, the TOLL packaging is to ensure humidity sensitivity level 1 (MSL1) to ensure reducing the failure rate in batch production.

In addition, ONSEMI also provides car-level devices, including TO-247 3 pins, 4 pins and D2PAK 7 pins.