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IPD200N15N3GBTMA1
- Part Number:
- IPD200N15N3GBTMA1
- Manufacturer:
- International Rectifier (Infineon Technologies)
- Description:
- MOSFET N-CH 150V 50A TO252-3
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 87370 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- IPD200N15N3GBTMA1.pdf
Introduction
Specifications
| Internal Part Number | RO-IPD200N15N3GBTMA1 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 4V @ 90µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO252-3 |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 50A, 10V |
| Power Dissipation (Max): | 150W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | IPD200N15N3 GCT IPD200N15N3 GCT-ND IPD200N15N3GBTMA1CT |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1820pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
| Drain to Source Voltage (Vdss): | 150V |
| Detailed Description: | N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3 |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Email: | [email protected] |
