FQI12N60TU
FQI12N60TU
Part Number:
FQI12N60TU
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 600V 10.5A I2PAK
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
51763 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
FQI12N60TU.pdf

Introduction

ROGER-TECH is the stocking distributor for FQI12N60TU, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQI12N60TU by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-FQI12N60TU
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK (TO-262)
Series:QFET®
Rds On (Max) @ Id, Vgs:700 mOhm @ 5.3A, 10V
Power Dissipation (Max):3.13W (Ta), 180W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:54nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 10.5A (Tc) 3.13W (Ta), 180W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
Email:[email protected]

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