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FQD12N20LTM
- Part Number:
- FQD12N20LTM
- Manufacturer:
- ON Semiconductor
- Description:
- MOSFET N-CH 200V 9A DPAK
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 46855 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- 1.FQD12N20LTM.pdf2.FQD12N20LTM.pdf
Introduction
Specifications
| Internal Part Number | RO-FQD12N20LTM |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | D-Pak |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 280 mOhm @ 4.5A, 10V |
| Power Dissipation (Max): | 2.5W (Ta), 55W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | FQD12N20LTM-ND FQD12N20LTMTR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 6 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Drain to Source Voltage (Vdss): | 200V |
| Detailed Description: | N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Email: | [email protected] |
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