ROGER-TECH is the stocking distributor for 1N5553US, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 1N5553US by email, we will give you a best price according your plan.
Buy 1N5553US with BYCHPS
Buy with guarantee
1N5553US
- Part Number:
- 1N5553US
- Manufacturer:
- Microsemi
- Description:
- DIODE GEN PURP 800V 3A B-MELF
- RoHS Status:
- Contains lead / RoHS non-compliant
- Quantity in Stock:
- 42809 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- 1N5553US.pdf
Introduction
Specifications
| Internal Part Number | RO-1N5553US |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 9A |
| Voltage - DC Reverse (Vr) (Max): | 800V |
| Supplier Device Package: | B, SQ-MELF |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Series: | - |
| Reverse Recovery Time (trr): | 2µs |
| Packaging: | Bulk |
| Package / Case: | SQ-MELF, B |
| Operating Temperature - Junction: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 7 Weeks |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Diode Type: | Standard |
| Detailed Description: | Diode Standard 800V 3A Surface Mount B, SQ-MELF |
| Current - Reverse Leakage @ Vr: | 1µA @ 800V |
| Current - Average Rectified (Io): | 3A |
| Capacitance @ Vr, F: | - |
| Email: | [email protected] |
Related parts for 1N5553US
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
1N5610 | Microsemi | TVS DIODE 30.5V 47.6V G AXIAL | Inquiry |
 |
1N5552C.TR | Semtech | DIODE GEN PURP 600V 5A AXIAL | Inquiry |
 |
1N5551US | Semtech | DIODE GEN PURP 400V 5A | Inquiry |
 |
1N5552 | Microsemi | DIODE GEN PURP 600V 3A AXIAL | Inquiry |
 |
1N5554 | Microsemi | DIODE GEN PURP 1KV 3A AXIAL | Inquiry |
|
1N5553US | Semtech | DIODE GEN PURP 800V 5A | Inquiry |
 |
1N5552US | Microsemi | DIODE GEN PURP 600V 3A D5B | Inquiry |
 |
1N5556 | Microsemi | TVS DIODE 40.3V 63.5V DO13 | Inquiry |
 |
1N5553 | Microsemi | DIODE GEN PURP 800V 3A AXIAL | Inquiry |
|
1N5553 | Semtech | DIODE GEN PURP 800V 5A AXIAL | Inquiry |
|
1N5554US | Semtech | DIODE GEN PURP 1KV 5A | Inquiry |
 |
1N5557 | Microsemi | TVS DIODE 49V 78.5V DO13 | Inquiry |
|
1N5555 | Microsemi | TVS DIODE 30.5V 47.5V DO13 | Inquiry |
|
1N5554C.TR | Semtech | DIODE GEN PURP 1KV 5A AXIAL | Inquiry |
 |
1N5551US | Microsemi | DIODE GEN PURP 400V 3A D5B | Inquiry |
|
1N5554US | Microsemi | DIODE GEN PURP 1KV 3A B-MELF | Inquiry |
|
1N5552 | Semtech | DIODE GEN PURP 600V 5A AXIAL | Inquiry |
|
1N5558 | Microsemi | TVS DIODE 175V 265V DO13 | Inquiry |
|
1N5553C.TR | Semtech | DIODE GEN PURP 800V 3A AXIAL | Inquiry |
|
1N5554 | Semtech | DIODE GEN PURP 1KV 5A AXIAL | Inquiry |
Latest News
- Capacitor working principle
- Renesas is the first to launch a universal 32-bit RISC-V MCU with the self-developed CPU kernel
- ON Anmei's low -power image sensor facing the modern visual system
- ADI cooperates with BMW Group to launch the industry's leading 10MB car Ethernet technology, opening a new chapter in software definition automobiles
- VISHAY launches the knob potentiometer, simplifying industrial and audio application design and optimizing costs
- Toshiba launches SmartMCD series gate driver IC with embedded microcontroller
- ADI deployment Sambanova kit, promoting the production formula AI to achieve breakthrough at an enterprise level
- Honeywell and ADI joined hands to promote the innovation and change of building automation
- MAXIM announced the launch
- MAXIM launches a car DC-DC converter MAX16984, a car with integrated USB charging enumers
- RENESAS Electronics launches the industry's first programmable electrical driver IC
- Renesas launched the first generation of 32-bit RISC-V CPU kernel