Nomor Bagian Internal | RO-W632GU8AB-11 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Tulis Siklus Waktu - Kata, Halaman: | - |
Tegangan - Pasokan: | 1.283 V ~ 1.45 V |
Teknologi: | SDRAM - DDR3 |
Seri: | - |
Suhu Operasional: | 0°C ~ 95°C (TC) |
Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
memory Type: | Volatile |
Ukuran memori: | 2Gb (128M x 16) |
Antarmuka Memori: | Parallel |
Format Memori: | DRAM |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Detil Deskripsi: | SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 933MHz 20ns |
Frekuensi Jam: | 933MHz |
Waktu akses: | 20ns |
Email: | [email protected] |