SSR1N60BTM_F080
Nomor bagian:
SSR1N60BTM_F080
Pabrikan:
ON Semiconductor
Deskripsi:
MOSFET N-CH 600V 0.9A DPAK
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
84564 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
SSR1N60BTM_F080.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-SSR1N60BTM_F080
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:D-Pak
Seri:-
Rds Pada (Max) @ Id, Vgs:12 Ohm @ 450mA, 10V
Power Disipasi (Max):2.5W (Ta), 28W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:215pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):600V
Detil Deskripsi:N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25 ° C:900mA (Tc)
Email:[email protected]

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