Nomor Bagian Internal | RO-FQD4P25TM-WS |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 5V @ 250µA |
Vgs (Max): | ±30V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | D-Pak |
Seri: | QFET® |
Rds Pada (Max) @ Id, Vgs: | 2.1 Ohm @ 1.55A, 10V |
Power Disipasi (Max): | 2.5W (Ta), 45W (Tc) |
Pengemasan: | Original-Reel® |
Paket / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Nama lain: | FQD4P25TM-WSDKR FQD4P25TM_WSDKR FQD4P25TM_WSDKR-ND |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 9 Weeks |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 420pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
FET Jenis: | P-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 250V |
Detil Deskripsi: | P-Channel 250V 3.1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak |
Current - Continuous Drain (Id) @ 25 ° C: | 3.1A (Tc) |
Email: | [email protected] |