SSM6N43FU,LF
Artikelnummer:
SSM6N43FU,LF
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET 2N-CH 20V 0.5A US6
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
53822 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
SSM6N43FU,LF.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-SSM6N43FU,LF
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1V @ 1mA
Supplier Device-Gehäuse:US6
Serie:-
Rds On (Max) @ Id, Vgs:630 mOhm @ 200mA, 5V
Leistung - max:200mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Andere Namen:SSM6N43FU,LF(B
SSM6N43FU,LF(T
SSM6N43FU,LFT
SSM6N43FULFTR
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:46pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:1.23nC @ 4V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate, 1.5V Drive
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 500mA 200mW Surface Mount US6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:500mA
Email:[email protected]

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