NTAT6H406NT4G
NTAT6H406NT4G
Artikelnummer:
NTAT6H406NT4G
Hersteller:
ON Semiconductor
Beschreibung:
NCH 80V 175A 2.9MOHM
Menge auf Lager:
76127 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NTAT6H406NT4G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NTAT6H406NT4G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:ATPAK
Serie:-
Rds On (Max) @ Id, Vgs:2.9 mOhm @ 50A, 10V
Verlustleistung (max):90W (Tc)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Hersteller Standard Vorlaufzeit:42 Weeks
Bleifreier Status:Lead free
Eingabekapazität (Ciss) (Max) @ Vds:8040pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):80V
detaillierte Beschreibung:N-Channel 80V 175A (Ta) 90W (Tc) Surface Mount ATPAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:175A (Ta)
Email:[email protected]

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