IXFK60N55Q2
IXFK60N55Q2
Artikelnummer:
IXFK60N55Q2
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 550V 60A TO-264
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
39946 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFK60N55Q2.pdf

Einführung

We can supply IXFK60N55Q2, use the request quote form to request IXFK60N55Q2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFK60N55Q2.The price and lead time for IXFK60N55Q2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFK60N55Q2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IXFK60N55Q2
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4.5V @ 8mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-264AA (IXFK)
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:88 mOhm @ 30A, 10V
Verlustleistung (max):735W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-264-3, TO-264AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:7300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:200nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):550V
detaillierte Beschreibung:N-Channel 550V 60A (Tc) 735W (Tc) Through Hole TO-264AA (IXFK)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:60A (Tc)
Email:[email protected]

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