FDD3570
Artikelnummer:
FDD3570
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 80V 10A D-PAK
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
59718 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
FDD3570.pdf

Einführung

We can supply FDD3570, use the request quote form to request FDD3570 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDD3570.The price and lead time for FDD3570 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDD3570.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-FDD3570
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-252
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:20 mOhm @ 10A, 10V
Verlustleistung (max):3.4W (Ta), 69W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2800pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:76nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):6V, 10V
Drain-Source-Spannung (Vdss):80V
detaillierte Beschreibung:N-Channel 80V 10A (Ta) 3.4W (Ta), 69W (Tc) Surface Mount TO-252
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:10A (Ta)
Email:[email protected]

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