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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-Bipolar (BJT)-Einzel > ESM2012DV
ESM2012DV
ESM2012DV
Artikelnummer:
ESM2012DV
Hersteller:
STMicroelectronics
Beschreibung:
TRANS NPN DARL 120V 120A ISOTOP
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
57270 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
ESM2012DV.pdf
Anfrage

Einführung

We can supply ESM2012DV, use the request quote form to request ESM2012DV pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ESM2012DV.The price and lead time for ESM2012DV depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ESM2012DV.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-ESM2012DV
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):120V
VCE Sättigung (Max) @ Ib, Ic:1.5V @ 1A, 100A
Transistor-Typ:NPN - Darlington
Supplier Device-Gehäuse:ISOTOP®
Serie:-
Leistung - max:175W
Verpackung:Tube
Verpackung / Gehäuse:ISOTOP
Betriebstemperatur:150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Bipolar (BJT) Transistor NPN - Darlington 120V 120A 175W Chassis Mount ISOTOP®
DC Stromgewinn (HFE) (Min) @ Ic, VCE:1200 @ 100A, 5V
Strom - Collector Cutoff (Max):-
Strom - Kollektor (Ic) (max):120A
Email:[email protected]

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