2SC5706-P-E
2SC5706-P-E
Artikelnummer:
2SC5706-P-E
Hersteller:
ON Semiconductor
Beschreibung:
TRANS NPN 100V 5A
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
80387 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
2SC5706-P-E.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-2SC5706-P-E
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):100V
VCE Sättigung (Max) @ Ib, Ic:240mV @ 100mA, 2A
Transistor-Typ:NPN
Supplier Device-Gehäuse:TP
Serie:-
Leistung - max:800mW
Verpackung:Bulk
Verpackung / Gehäuse:TO-251-3 Short Leads, IPak, TO-251AA
Betriebstemperatur:-
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:6 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:400MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW Through Hole TP
DC Stromgewinn (HFE) (Min) @ Ic, VCE:200 @ 500mA, 2V
Strom - Collector Cutoff (Max):1µA (ICBO)
Strom - Kollektor (Ic) (max):5A
Email:[email protected]

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