SIHG33N65E-GE3
SIHG33N65E-GE3
型號:
SIHG33N65E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET N-CH 650V 32.4A TO-247AC
RoHS狀態:
無鉛/符合RoHS
庫存數量:
89490 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SIHG33N65E-GE3.pdf

簡單介紹

We can supply SIHG33N65E-GE3, use the request quote form to request SIHG33N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHG33N65E-GE3.The price and lead time for SIHG33N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHG33N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SIHG33N65E-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
電壓 - 測試:4040pF @ 100V
電壓 - 擊穿:TO-247AC
VGS(TH)(最大)@標識:105 mOhm @ 16.5A, 10V
Vgs(最大):10V
技術:MOSFET (Metal Oxide)
系列:-
RoHS狀態:Digi-Reel®
RDS(ON)(最大值)@標識,柵極電壓:32.4A (Tc)
極化:TO-247-3
其他名稱:SIHG33N65E-GE3DKR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度(MSL):1 (Unlimited)
製造商標準交貨期:20 Weeks
製造商零件編號:SIHG33N65E-GE3
輸入電容(Ciss)(Max)@ Vds:173nC @ 10V
IGBT類型:±30V
柵極電荷(Qg)(Max)@ Vgs:4V @ 250µA
FET特點:N-Channel
展開說明:N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC
漏極至源極電壓(Vdss):-
描述:MOSFET N-CH 650V 32.4A TO-247AC
電流 - 25°C連續排水(Id):650V
電容比:313W (Tc)
Email:[email protected]

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