SIHF12N65E-GE3
SIHF12N65E-GE3
型號:
SIHF12N65E-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CH 650V 12A TO-220
RoHS狀態:
無鉛/符合RoHS
庫存數量:
49878 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SIHF12N65E-GE3.pdf

簡單介紹

We can supply SIHF12N65E-GE3, use the request quote form to request SIHF12N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHF12N65E-GE3.The price and lead time for SIHF12N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHF12N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SIHF12N65E-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
供應商設備封裝:TO-220 Full Pack
系列:-
RDS(ON)(最大值)@標識,柵極電壓:380 mOhm @ 6A, 10V
功率耗散(最大):33W (Tc)
封装:Cut Tape (CT)
封裝/箱體:TO-220-3 Full Pack
其他名稱:SIHF12N65E-GE3CT
SIHF12N65E-GE3CT-ND
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:1224pF @ 100V
柵極電荷(Qg)(Max)@ Vgs:70nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):650V
詳細說明:N-Channel 650V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
電流 - 25°C連續排水(Id):12A (Tc)
Email:[email protected]

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