SI4288DY-T1-GE3
型號:
SI4288DY-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 2N-CH 40V 9.2A 8SO
RoHS狀態:
無鉛/符合RoHS
庫存數量:
81457 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI4288DY-T1-GE3.pdf

簡單介紹

We can supply SI4288DY-T1-GE3, use the request quote form to request SI4288DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4288DY-T1-GE3.The price and lead time for SI4288DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4288DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI4288DY-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
電壓 - 測試:580pF @ 20V
電壓 - 擊穿:8-SO
VGS(TH)(最大)@標識:20 mOhm @ 10A, 10V
系列:TrenchFET®
RoHS狀態:Tape & Reel (TR)
RDS(ON)(最大值)@標識,柵極電壓:9.2A
功率 - 最大:3.1W
極化:8-SOIC (0.154", 3.90mm Width)
其他名稱:SI4288DY-T1-GE3TR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度(MSL):1 (Unlimited)
製造商標準交貨期:24 Weeks
製造商零件編號:SI4288DY-T1-GE3
輸入電容(Ciss)(Max)@ Vds:15nC @ 10V
柵極電荷(Qg)(Max)@ Vgs:2.5V @ 250µA
FET特點:2 N-Channel (Dual)
展開說明:Mosfet Array 2 N-Channel (Dual) 40V 9.2A 3.1W Surface Mount 8-SO
漏極至源極電壓(Vdss):Logic Level Gate
描述:MOSFET 2N-CH 40V 9.2A 8SO
電流 - 25°C連續排水(Id):40V
Email:[email protected]

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