SI3900DV-T1-E3
SI3900DV-T1-E3
型號:
SI3900DV-T1-E3
製造商:
Vishay / Siliconix
描述:
MOSFET 2N-CH 20V 2A 6-TSOP
RoHS狀態:
無鉛/符合RoHS
庫存數量:
66251 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI3900DV-T1-E3.pdf

簡單介紹

We can supply SI3900DV-T1-E3, use the request quote form to request SI3900DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3900DV-T1-E3.The price and lead time for SI3900DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3900DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI3900DV-T1-E3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
電壓 - 測試:-
電壓 - 擊穿:6-TSOP
VGS(TH)(最大)@標識:125 mOhm @ 2.4A, 4.5V
系列:TrenchFET®
RoHS狀態:Tape & Reel (TR)
RDS(ON)(最大值)@標識,柵極電壓:2A
功率 - 最大:830mW
極化:SOT-23-6 Thin, TSOT-23-6
其他名稱:SI3900DV-T1-E3TR
SI3900DVT1E3
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度(MSL):1 (Unlimited)
製造商標準交貨期:15 Weeks
製造商零件編號:SI3900DV-T1-E3
輸入電容(Ciss)(Max)@ Vds:4nC @ 4.5V
柵極電荷(Qg)(Max)@ Vgs:1.5V @ 250µA
FET特點:2 N-Channel (Dual)
展開說明:Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
漏極至源極電壓(Vdss):Logic Level Gate
描述:MOSFET 2N-CH 20V 2A 6-TSOP
電流 - 25°C連續排水(Id):20V
Email:[email protected]

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