SI3460BDV-T1-GE3
SI3460BDV-T1-GE3
型號:
SI3460BDV-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET N-CH 20V 8A 6-TSOP
RoHS狀態:
無鉛/符合RoHS
庫存數量:
57776 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI3460BDV-T1-GE3.pdf

簡單介紹

We can supply SI3460BDV-T1-GE3, use the request quote form to request SI3460BDV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3460BDV-T1-GE3.The price and lead time for SI3460BDV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3460BDV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI3460BDV-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
電壓 - 測試:860pF @ 10V
電壓 - 擊穿:6-TSOP
VGS(TH)(最大)@標識:27 mOhm @ 5.1A, 4.5V
技術:MOSFET (Metal Oxide)
系列:TrenchFET®
RoHS狀態:Tape & Reel (TR)
RDS(ON)(最大值)@標識,柵極電壓:8A (Tc)
極化:SOT-23-6 Thin, TSOT-23-6
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度(MSL):1 (Unlimited)
製造商標準交貨期:15 Weeks
製造商零件編號:SI3460BDV-T1-GE3
輸入電容(Ciss)(Max)@ Vds:24nC @ 8V
柵極電荷(Qg)(Max)@ Vgs:1V @ 250µA
FET特點:N-Channel
展開說明:N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
漏極至源極電壓(Vdss):-
描述:MOSFET N-CH 20V 8A 6-TSOP
電流 - 25°C連續排水(Id):20V
電容比:2W (Ta), 3.5W (Tc)
Email:[email protected]

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