STS9P2UH7
STS9P2UH7
Artikelnummer:
STS9P2UH7
Tillverkare:
STMicroelectronics
Beskrivning:
MOSFET P-CH 20V 9A 8-SOIC
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
72391 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
STS9P2UH7.pdf

Introduktion

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Specifikationer

Internt delnummer RO-STS9P2UH7
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:8-SO
Serier:STripFET™
Rds On (Max) @ Id, Vgs:22.5 mOhm @ 4.5A, 4.5V
Effektdissipation (Max):2.7W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:8-SOIC (0.154", 3.90mm Width)
Andra namn:497-15155-2
Driftstemperatur:150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:2390pF @ 16V
Gate Laddning (Qg) (Max) @ Vgs:22nC @ 4.5V
FET-typ:P-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):1.5V, 4.5V
Avlopp till källspänning (Vdss):20V
detaljerad beskrivning:P-Channel 20V 9A (Tc) 2.7W (Tc) Surface Mount 8-SO
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:9A (Tc)
Email:[email protected]

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