STI11NM60ND
STI11NM60ND
Artikelnummer:
STI11NM60ND
Tillverkare:
STMicroelectronics
Beskrivning:
MOSFET N-CH 600V 10A I2PAK
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
66208 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
STI11NM60ND.pdf

Introduktion

We can supply STI11NM60ND, use the request quote form to request STI11NM60ND pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STI11NM60ND.The price and lead time for STI11NM60ND depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STI11NM60ND.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-STI11NM60ND
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±25V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:I2PAK
Serier:FDmesh™ II
Rds On (Max) @ Id, Vgs:450 mOhm @ 5A, 10V
Effektdissipation (Max):90W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-262-3 Long Leads, I²Pak, TO-262AA
Driftstemperatur:150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:850pF @ 50V
Gate Laddning (Qg) (Max) @ Vgs:30nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):600V
detaljerad beskrivning:N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:10A (Tc)
Email:[email protected]

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