STD1HN60K3
STD1HN60K3
Artikelnummer:
STD1HN60K3
Tillverkare:
STMicroelectronics
Beskrivning:
MOSFET N-CH 600V 1.2A DPAK
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
76317 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
STD1HN60K3.pdf

Introduktion

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Specifikationer

Internt delnummer RO-STD1HN60K3
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:4.5V @ 50µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:DPAK
Serier:SuperMESH3™
Rds On (Max) @ Id, Vgs:8 Ohm @ 600mA, 10V
Effektdissipation (Max):27W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:TO-252-3, DPak (2 Leads + Tab), SC-63
Andra namn:497-13748-2
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:140pF @ 50V
Gate Laddning (Qg) (Max) @ Vgs:9.5nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):600V
detaljerad beskrivning:N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:1.2A (Tc)
Email:[email protected]

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