SIHFS11N50A-GE3
SIHFS11N50A-GE3
Artikelnummer:
SIHFS11N50A-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CH 500V 11A TO263
Antal i lager:
52689 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
SIHFS11N50A-GE3.pdf

Introduktion

We can supply SIHFS11N50A-GE3, use the request quote form to request SIHFS11N50A-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHFS11N50A-GE3.The price and lead time for SIHFS11N50A-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHFS11N50A-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-SIHFS11N50A-GE3
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-263 (D²Pak)
Serier:-
Rds On (Max) @ Id, Vgs:520 mOhm @ 6.6A, 10V
Effektdissipation (Max):170W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Tillverkarens normala ledtid:18 Weeks
Inputkapacitans (Ciss) (Max) @ Vds:1423pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:52nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):500V
detaljerad beskrivning:N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount TO-263 (D²Pak)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:11A (Tc)
Email:[email protected]

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