SI5401DC-T1-GE3
SI5401DC-T1-GE3
Artikelnummer:
SI5401DC-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET P-CH 20V 5.2A 1206-8
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
53738 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
SI5401DC-T1-GE3.pdf

Introduktion

We can supply SI5401DC-T1-GE3, use the request quote form to request SI5401DC-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI5401DC-T1-GE3.The price and lead time for SI5401DC-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI5401DC-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-SI5401DC-T1-GE3
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:1206-8 ChipFET™
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:32 mOhm @ 5.2A, 4.5V
Effektdissipation (Max):1.3W (Ta)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:8-SMD, Flat Lead
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Gate Laddning (Qg) (Max) @ Vgs:25nC @ 4.5V
FET-typ:P-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):1.8V, 4.5V
Avlopp till källspänning (Vdss):20V
detaljerad beskrivning:P-Channel 20V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:5.2A (Ta)
Email:[email protected]

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