ISL9N303AS3ST
ISL9N303AS3ST
Artikelnummer:
ISL9N303AS3ST
Tillverkare:
ON Semiconductor
Beskrivning:
MOSFET N-CH 30V 75A D2PAK
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
31689 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
ISL9N303AS3ST.pdf

Introduktion

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Specifikationer

Internt delnummer RO-ISL9N303AS3ST
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:D²PAK (TO-263AB)
Serier:UltraFET™
Rds On (Max) @ Id, Vgs:3.2 mOhm @ 75A, 10V
Effektdissipation (Max):215W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:7000pF @ 15V
Gate Laddning (Qg) (Max) @ Vgs:172nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):4.5V, 10V
Avlopp till källspänning (Vdss):30V
detaljerad beskrivning:N-Channel 30V 75A (Tc) 215W (Tc) Surface Mount D²PAK (TO-263AB)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:75A (Tc)
Email:[email protected]

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