FDG311N
Artikelnummer:
FDG311N
Tillverkare:
ON Semiconductor
Beskrivning:
MOSFET N-CH 20V 1.9A SC70-6
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
43663 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
FDG311N.pdf

Introduktion

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Specifikationer

Internt delnummer RO-FDG311N
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:SC-70-6
Serier:PowerTrench®
Rds On (Max) @ Id, Vgs:115 mOhm @ 1.9A, 4.5V
Effektdissipation (Max):750mW (Ta)
Förpackning:Cut Tape (CT)
Förpackning / Fodral:6-TSSOP, SC-88, SOT-363
Andra namn:FDG311NCT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:42 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:270pF @ 10V
Gate Laddning (Qg) (Max) @ Vgs:4.5nC @ 4.5V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):2.5V, 4.5V
Avlopp till källspänning (Vdss):20V
detaljerad beskrivning:N-Channel 20V 1.9A (Ta) 750mW (Ta) Surface Mount SC-70-6
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:1.9A (Ta)
Email:[email protected]

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