BSM080D12P2C008
BSM080D12P2C008
Artikelnummer:
BSM080D12P2C008
Tillverkare:
LAPIS Semiconductor
Beskrivning:
SIC POWER MODULE-1200V-80A
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
72359 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
1.BSM080D12P2C008.pdf2.BSM080D12P2C008.pdf

Introduktion

We can supply BSM080D12P2C008, use the request quote form to request BSM080D12P2C008 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSM080D12P2C008.The price and lead time for BSM080D12P2C008 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSM080D12P2C008.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-BSM080D12P2C008
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:4V @ 13.2mA
Leverantörs Device Package:Module
Serier:-
Rds On (Max) @ Id, Vgs:-
Effekt - Max:600W
Förpackning:Tray
Förpackning / Fodral:Module
Driftstemperatur:175°C (TJ)
Monteringstyp:Chassis Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:32 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:800pF @ 10V
Gate Laddning (Qg) (Max) @ Vgs:-
FET-typ:2 N-Channel (Dual)
FET-funktionen:Silicon Carbide (SiC)
Avlopp till källspänning (Vdss):1200V (1.2kV)
detaljerad beskrivning:Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 80A (Tc) 600W Chassis Mount Module
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:80A (Tc)
Email:[email protected]

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