Numero ng Panloob na Bahagi | RO-SI3900DV-T1-E3 |
---|---|
Kondisyon | Original New |
Bansa Pinagmulan | Contact us |
Nangungunang Marking | email us |
Kapalit | See datasheet |
Boltahe - Test: | - |
Boltahe - Breakdown: | 6-TSOP |
Vgs (th) (Max) @ Id: | 125 mOhm @ 2.4A, 4.5V |
serye: | TrenchFET® |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs: | 2A |
Power - Max: | 830mW |
polariseysyon: | SOT-23-6 Thin, TSOT-23-6 |
Ibang pangalan: | SI3900DV-T1-E3TR SI3900DVT1E3 |
operating Temperature: | -55°C ~ 150°C (TJ) |
Salalayan Type: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Tagagawa Standard Lead Time: | 15 Weeks |
Manufacturer Bilang Bahagi: | SI3900DV-T1-E3 |
Input Kapasidad (Ciss) (Max) @ Vds: | 4nC @ 4.5V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5V @ 250µA |
FET Tampok: | 2 N-Channel (Dual) |
Ang pinalawak Paglalarawan: | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
Alisan ng tubig sa Source Boltahe (Vdss): | Logic Level Gate |
paglalarawan: | MOSFET 2N-CH 20V 2A 6-TSOP |
Current - Ang patuloy Drain (Id) @ 25 ° C: | 20V |
Email: | [email protected] |