Intern onderdeelnummer | RO-VQ1001P-E3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 2.5V @ 1mA |
Leverancier Device Pakket: | 14-DIP |
Serie: | - |
Rds On (Max) @ Id, VGS: | 1.75 Ohm @ 200mA, 5V |
Vermogen - Max: | 2W |
Packaging: | Tube |
Verpakking / doos: | - |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 110pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | - |
FET Type: | 4 N-Channel |
FET Feature: | Logic Level Gate |
Drain naar de Bron Voltage (Vdss): | 30V |
gedetailleerde beschrijving: | Mosfet Array 4 N-Channel 30V 830mA 2W Through Hole 14-DIP |
Current - Continuous Drain (Id) @ 25 ° C: | 830mA |
Email: | [email protected] |